IEEE 1160-1993
$94.25
IEEE Standard Test Procedures for High-Purity Germanium Crystals for Radiation Detectors
| Published By | Publication Date | Number of Pages |
| IEEE | 1993 | 36 |
New IEEE Standard – Inactive-Reserved. This standard applies to the measurement of bulk properties of high-purity germanium as they relate to fabrication and performance of germanium detectors for gamma rays and x rays. Such germanium is monocrystalline and has a net concentration of fewer than 1011 electrically active impurity center per cm3, usually on the order of 1010 cm-3.
PDF Catalog
| PDF Pages | PDF Title |
|---|---|
| 1 | Title Page |
| 3 | Introduction |
| 5 | CONTENTS |
| 7 | 1. Overview 1.1 Scope 1.2 Purpose |
| 8 | 2. References 3. Letter symbols |
| 9 | 4. Introduction |
| 10 | 5. Sample preparation and measurement of net electrically active impurity concentration |NA ā ND| 5.1 Sample preparation for van der Pauw measurements |
| 12 | 5.2 Measurement and analysis |
| 17 | 5.3 Spatial dependence of (NA ā ND) |
| 19 | 6. Deep-level transient spectroscopy (DLTS) for the characterization of point-defect trapping cen… |
| 20 | 6.1 Equipment |
| 21 | 6.2 Sample selection and preparation for DLTS 6.3 Measurement procedure |
| 25 | 6.4 Majority-carrier deep levels in p-type HPGe |
| 26 | 6.5 Majority-carrier deep levels in n-type HPGe 6.6 Reporting 7. Crystallographic properties 7.1 Crystallographic orientation 7.2 Sample preparation |
| 28 | 7.3 Reporting 8. Bibliography |
| 30 | Annex A |
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