IEEE 581 1978

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IEEE Standard Definitions, Symbols, and Characterization of Metal-Nitrite-Oxide Field-Effect Transistors

Published By	Publication Date	Number of Pages
IEEE	1978	44

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Description

New IEEE Standard – Inactive – Withdrawn. no abstract. Withdrawn Standard. Withdrawn Date: Dec 05, 1991.

PDF Catalog

PDF Pages	PDF Title
7	1.Introduction 1.1MOSandMNOS 1.2 Description of This Standard
8	1.3 Mechanism of MNOS Memory Transistor MNOS Transistor
10	1.4 Restrictions 2 Symbols and Definitions
14	3.References
15	4 MNOS Memory Threshold Definition and Measurement 4.1Background MOS Transistor
16	IGFET Circuit Symbols for Both Nonmemory and Memory Types
18	4.2 Threshold Voltage Test Methods Zero Current Method for Threshold Voltage Measurement
19	Plot of f/l DS Versus V Measurement
20	4.3 Threshold Voltage Shifts Saturated Drain-Constant Current Method of Threshold Voltage Measurement Source Follower-Constant Current Method of Threshold Voltage Measurement
21	5 Writing Characteristics of MNOS Memory Transistors 5.1Background
22	5.2 Methods for Deriving Writing Characteristics Pulse Sequence to Measure Writing Characteristics Fig 10 Writing Characteristic at Constant Writing Voltage
23	Fig 11 Typical Family of Writing Characteristics Fig 12 Pulse Train for Unsaturated Writing
24	6 Retention of MNOS Memory Transistors 6.1Background Fig 13 Retention Plot
25	6.2 Methods of Measurement
26	Fig 14 Starting Condition for LC State Fig 15 Starting Condition for HC State
27	Fig 17 Zero Bias Retention Plot
28	6.3 Accelerated Retention Measurements Fig 18 Measurement of Retention at Constant Current Fig 19 Constant Drain Current Retention Plot
29	Fig 20 Constant Gate Voltage Retention Plot
30	7 Endurance of MNOS Memory Transistors 7.1Background 7.2 Measurement of Endurance Fig 21 Retention Plot Before and After Write-Erase Cycling for EAROM
31	Fig 22 Pulse Train for Write-High-Write-Low Cycling Fig 23 Presentation of Endurance Data Definition tRo at Limit = tR0/2
32	Fig 25 Decay Constant Versus Accumulated Write-Erase Dose for Various Nitride Thicknesses
33	7.3 Accelerated Endurance Testing 8 Basic Device Characteristics 8.1Background 8.2 Testing of Device Parameters
34	Fig 26 Reverse Drain Breakdown Walkout
35	8.3 Device Construction and Description Fig 27 Relationship of Gate Stress to Writing Characteristics
36	9 Radiation Effects on MNOS Memory Transistors 9.1Background Fig 28 Protected Source-Drain MNOS Structure Table 2 MNOS Device Description (Sample) Table 3 MNOS Process Description
37	9.2 Measurement of Radiation Effects
38	Fig 29 MNOS RAM Writing Characteristic After Irradiation with CO 60 Gamma Fig 30 MNOS RAM Data Retention After Irradiation with CO 60 Gamma
40	Fig 31 MNOS Memory Transistor Parameter Checker
41	Fig 32 MNOS Test Fixture and Threshold Seeker Waveforms
42	Fig 33 Typical Flash X-Ray Timing Sequence Fig 34 Flash X-Ray Test Setup
43	10 Alphabetical Subject Index Fig 35 Effect of High Dose Rate on Data Retention in MNOS RAM

Additional information

Standard Title	IEEE Standard Definitions, Symbols, and Characterization of Metal-Nitrite-Oxide Field-Effect Transistors
Published Code	IEEE
Publication Date	1978
Pages Count	44

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IEEE 581 1978

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