{"id":79834,"date":"2024-10-17T18:38:23","date_gmt":"2024-10-17T18:38:23","guid":{"rendered":"https:\/\/pdfstandards.shop\/product\/uncategorized\/ieee-1160-1993\/"},"modified":"2024-10-24T19:41:32","modified_gmt":"2024-10-24T19:41:32","slug":"ieee-1160-1993","status":"publish","type":"product","link":"https:\/\/pdfstandards.shop\/product\/publishers\/ieee\/ieee-1160-1993\/","title":{"rendered":"IEEE 1160 1993"},"content":{"rendered":"
New IEEE Standard – Active. This standard applies to the measurement of bulk properties of high-purity germanium as they relate to fabrication and performance of germanium detectors for gamma rays and x rays. Such germanium is monocrystalline and has a net concentration of fewer than 1011 electrically active impurity center per cm3, usually on the order of 1010 cm-3.<\/p>\n
PDF Pages<\/th>\n | PDF Title<\/th>\n<\/tr>\n | ||||||
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1<\/td>\n | Title Page <\/td>\n<\/tr>\n | ||||||
3<\/td>\n | Introduction <\/td>\n<\/tr>\n | ||||||
5<\/td>\n | CONTENTS <\/td>\n<\/tr>\n | ||||||
7<\/td>\n | 1. Overview 1.1 Scope 1.2 Purpose <\/td>\n<\/tr>\n | ||||||
8<\/td>\n | 2. References 3. Letter symbols <\/td>\n<\/tr>\n | ||||||
9<\/td>\n | 4. Introduction <\/td>\n<\/tr>\n | ||||||
10<\/td>\n | 5. Sample preparation and measurement of net electrically active impurity concentration |NA \u2013 ND| 5.1 Sample preparation for van der Pauw measurements <\/td>\n<\/tr>\n | ||||||
12<\/td>\n | 5.2 Measurement and analysis <\/td>\n<\/tr>\n | ||||||
17<\/td>\n | 5.3 Spatial dependence of (NA \u2013 ND) <\/td>\n<\/tr>\n | ||||||
19<\/td>\n | 6. Deep-level transient spectroscopy (DLTS) for the characterization of point-defect trapping cen… <\/td>\n<\/tr>\n | ||||||
20<\/td>\n | 6.1 Equipment <\/td>\n<\/tr>\n | ||||||
21<\/td>\n | 6.2 Sample selection and preparation for DLTS 6.3 Measurement procedure <\/td>\n<\/tr>\n | ||||||
25<\/td>\n | 6.4 Majority-carrier deep levels in p-type HPGe <\/td>\n<\/tr>\n | ||||||
26<\/td>\n | 6.5 Majority-carrier deep levels in n-type HPGe 6.6 Reporting 7. Crystallographic properties 7.1 Crystallographic orientation 7.2 Sample preparation <\/td>\n<\/tr>\n | ||||||
28<\/td>\n | 7.3 Reporting 8. Bibliography <\/td>\n<\/tr>\n | ||||||
30<\/td>\n | Annex A <\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":" IEEE Standard Test Procedures for High-Purity Germanium Crystals for Radiation Detectors<\/b><\/p>\n |