ASTM-F1809:1997 Edition

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F1809-97 Standard Guide for Selection and Use of Etching Solutions to Delineate Structural Defects in Silicon

Published By	Publication Date	Number of Pages
ASTM	1997	9

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Description

ASTM F1809-97

Historical Standard: Standard Guide for Selection and Use of Etching Solutions to Delineate Structural Defects in Silicon

ASTM F1809

Scope

1.1 This guide covers the formulation, selection, and use of chemical solutions developed to reveal structural defects in silicon wafers. Etching solutions identify crystal defects that adversely affect the circuit performance and yield of silicon devices. Sample preparation, temperature control, etching technique, and choice of etchant are all key factors in the successful use of an etching method. This guide provides information for several etching solutions and allows the user to select according to the need. For further information see Appendix X1 and Figs. 1-32. For a test method for counting preferentially etched or decorated surface defects in silicon wafers see Test Method F 1810.

1.2 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Keywords

defect density; dislocation; grain boundary; microscopic; polycrystalline; imperfection; preferential etch; silicon; slip

ICS Code

ICS Number Code 29.045 (Semiconducting materials)

DOI: 10.1520/F1809-97

Additional information

Standard Title	F1809-97 Standard Guide for Selection and Use of Etching Solutions to Delineate Structural Defects in Silicon
Published Code	ASTM
Publication Date	1997
Pages Count	9