ASTM-F980M 2003
$40.63
F980M-96(2003) Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices [Metric]
| Published By | Publication Date | Number of Pages |
| ASTM | 2003 | 5 |
ASTM F980M-96-Reapproved2003
Historical Standard: Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices [Metric]
ASTM F980M
Scope
1.1 This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits for rapid-annealing effects from displacement damage resulting from neutron radiation. This test will produce degradation of the electrical properties of the irradiated devices and should be considered a destructive test. Rapid annealing of displacement damage is usually associated with bipolar technologies.
1.2 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to consult and establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
Keywords
annealing factor; displacement damage; integrated circuits; neutron damage; neutron degradation; rapid annealing; semiconductor devices
ICS Code
ICS Number Code 29.045 (Semiconducting materials)
DOI: 10.1520/F0980M-96R03
PDF Catalog
| PDF Pages | PDF Title |
|---|---|
| 1 | Scope Referenced Documents Terminology Summary of Guide |
| 2 | Significance and Use Interferences |
| 3 | Apparatus Procedure |
| 4 | Report Keywords FIG. 1 |
| 5 | REFERENCES |
