BS EN 60747-2:2016:2018 Edition
$189.07
Semiconductor devices – Discrete devices. Rectifier diodes
| Published By | Publication Date | Number of Pages |
| BSI | 2018 | 48 |
IEC 60747-2:2016 provides standards for the following categories or sub-categories of rectifier diodes, including: – line rectifier diodes; – avalanche rectifier diodes; – fast-switching rectifier diodes; – Schottky barrier diodes. This edition includes the following significant technical changes with respect to the previous edition: a) Schottky barrier diodes and its properties are added; b) Clauses 3, 4, 5 and 7 were amended with some deletions of information no longer in use or already included in other parts of the IEC 60747 series, and with some necessary additions; c) Clause 6 was moved and added to Clause 7 of this third edition; d) some parts of Clause 7 were moved and added to Clause 7 of this third edition; e) Annex A was deleted. This publication is to be read in conjunction with /2.
PDF Catalog
| PDF Pages | PDF Title |
|---|---|
| 2 | undefined |
| 4 | English CONTENTS |
| 7 | FOREWORD |
| 9 | 1 Scope 2 Normative references 3 Terms and definitions 3.1 General terms and definitions |
| 10 | 3.2 Voltages |
| 11 | 3.3 Currents |
| 12 | 3.4 Power dissipation |
| 13 | 3.5 Switching characteristics Figures Figure 1 – Voltage waveform during forward recovery, specification method I Figure 2 – Voltage waveform during forward recovery, specification method II |
| 14 | Figure 3 – Current waveform during reverse recovery |
| 15 | Figure 4 – Diode turn-off, voltage, current and recovered charge |
| 16 | 4 Letter symbols 4.1 General 4.2 List of letter symbols 4.2.1 Voltages 4.2.2 Currents Figure 5 – Reverse voltage ratings |
| 17 | 4.2.3 Powers 4.2.4 Switching Figure 6 – Forward current ratings |
| 18 | 5 Essential ratings and characteristics 5.1 General 5.2 Ratings (limiting conditions) 5.2.1 Storage temperature (Tstg) 5.2.2 Operating ambient or heatsink or case or junction temperature (Ta or Ts or Tc or Tvj) 5.2.3 Non-repetitive peak reverse voltage (VRSM) 5.2.4 Repetitive peak reverse voltage (VRRM) (where appropriate) 5.2.5 Continuous (direct) reverse voltage (VR) (where appropriate) 5.2.6 Mean forward current (IF(AV)) 5.2.7 R.M.S forward current (IF(R.M.S.)) 5.2.8 Repetitive peak forward current (IFRM) (where appropriate) 5.2.9 Non-repetitive surge forward current (IFSM) |
| 19 | 5.2.10 Continuous (direct) forward current (IF) 5.2.11 Peak case non-rupture current (IRSMC) (where appropriate) 5.2.12 Non-repetitive surge reverse power dissipation (PRSM) (for avalanche rectifier diodes) 5.2.13 Repetitive peak reverse power dissipation (PRRM) (for avalanche rectifier diodes) 5.2.14 Mean reverse power dissipation (PR(AV)) (for avalanche rectifier diodes) 5.2.15 Mounting torque (M) (where appropriate) 5.2.16 Clamping force (F) for disc type diodes (where appropriate) 5.3 Characteristics 5.3.1 General 5.3.2 Forward voltage (VF) |
| 20 | 5.3.3 Peak forward voltage (VFM) (where appropriate) 5.3.4 Breakdown voltage (V(BR)) (of an avalanche rectifier diode) 5.3.5 Continuous (direct) reverse current (IR(D)) 5.3.6 Repetitive peak reverse current (IRRM) (where appropriate) 5.3.7 Recovered charge (Qr) (where appropriate) 5.3.8 Total capacitive charge (QC) (where appropriate) 5.3.9 Peak reverse recovery current (Irrm) (where appropriate) Figure 7 – Recovered charge Qr, peak reverse recovery current Irrm, reverse recovery time trr (idealized characteristics) |
| 21 | 5.3.10 Reverse recovery time (trr) (where appropriate) 5.3.11 Reverse recovery energy (Err) (where appropriate) 5.3.12 Forward recovery time (tfr) (where appropriate) 5.3.13 Peak forward recovery voltage (VFRM) (where appropriate) 5.3.14 Reverse recovery softness factor (Srr) (where appropriate) 5.3.15 Thermal resistance (Rth) 5.3.16 Transient thermal impedance (Zth(t)) (where appropriate) 6 Measuring and test methods 6.1 Measuring methods for electrical characteristics 6.1.1 General |
| 22 | 6.1.2 Forward voltage (VF, VFM) Figure 8 – Circuit diagram for the measurement of forward voltage (d.c. method) |
| 23 | Figure 9 – Circuit diagram for the measurement of forward voltage (oscilloscope method) Figure 10 – Graphic representation of on-state voltage versus current characteristic |
| 24 | Figure 11 – Circuit diagram for forward voltage measurement (pulse method) |
| 25 | 6.1.3 Breakdown voltage (V(BR)) of avalanche rectifier diodes 6.1.4 Reverse current (IR) Figure 12 – Circuit diagram for breakdown voltage measurement |
| 26 | 6.1.5 Repetitive peak reverse current (IRRM) Figure 13 – Circuit diagram for reverse current measurement |
| 27 | 6.1.6 Recovered charge, reverse recovery time, reverse recovery energy and softness factor (Qr, trr, Err, Srr) Figure 14 – Circuit diagram for peak reverse current measurement |
| 28 | Figure 15 – Circuit diagram for recovered charge measurement, half sinusoidal wave method Figure 16 – Current waveform through the diode D during recovered charge measurement, half sinusoidal wave method |
| 30 | Figure 17 – Circuit diagram for recovered charge measurement, rectangular wave method Figure 18 – Current waveform through the diode D recovered charge measurement, rectangular wave method |
| 32 | 6.1.7 Forward recovery time (tfr) and peak forward recovery voltage (Vfrm) Figure 19 – Circuit diagram for forward recovery time measurement Figure 20 – Current waveform forward recovery time measurement |
| 33 | Figure 21 – Voltage waveform forward recovery time measurement |
| 34 | 6.1.8 Total capacitive charge (QC) Figure 22 – Circuit diagram for total capacitive charge measurement |
| 35 | 6.2 Measuring methods for thermal characteristics 6.2.1 General 6.2.2 Thermal resistance (Rth(j-r)) and transient thermal impedance (Zth(j-r)(t)) Figure 23 – Circuit diagram for thermal impedance measurement |
| 36 | Figure 24 – Calibration curve showing a typical variation of the forward voltage VF at a low measuring current I2 with the case temperature Tc (when heated from outside, i.e. Tc = Tvj) |
| 37 | 6.3 Verification test methods for ratings (limiting values) 6.3.1 Surge (non-repetitive) forward current (IFSM) Figure 25 – Circuit diagram for surge forward current measurement |
| 38 | 6.3.2 Non-repetitive peak reverse voltage (VRSM) |
| 39 | Figure 26 – Circuit diagram for peak reverse voltage measurement |
| 40 | 6.3.3 Peak reverse power (repetitive or non-repetitive) (PRRM, PRSM) of avalanche rectifier diodes Figure 27 – Circuit to verify peak reverse power of avalanche rectifier diodes |
| 41 | Figure 28 – Triangular reverse current waveform Figure 29 – Sinusoidal reverse current waveform |
| 42 | Figure 30 – Rectangular reverse current waveform |
| 43 | 6.3.4 Peak case non-rupture current (IRSCM) Figure 31 – Verification of PRSM reverse power versus breakdown |
| 44 | Figure 32 – Circuit diagram for case non-rupture current measurement Figure 33 – Waveform of the reverse current iR through the diode under test |
| 45 | 7 Requirements for type tests, routine tests and endurance tests; marking of rectifier diodes 7.1 Type tests 7.2 Routine tests |
| 46 | 7.3 Measuring and test methods 7.4 Marking of rectifier diodes 7.5 Endurance test 7.5.1 List of endurance tests 7.5.2 Conditions for endurance tests 7.5.3 Acceptance-defining characteristics and acceptance criteria for endurance tests Tables Table 1 – Minimum type and routine tests for rectifier diodes |
| 47 | 7.5.4 Acceptancedefining characteristics and acceptance criteria for reliability tests Table 2 – Acceptance-defining characteristics for acceptance after endurance tests |
