BS EN 62047-16:2015
$102.76
Semiconductor devices. Micro-electromechanical devices – Test methods for determining residual stresses of MEMS films. Wafer curvature and cantilever beam deflection methods
| Published By | Publication Date | Number of Pages |
| BSI | 2015 | 18 |
This part of IEC 62047 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 μm to 10 μm in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods. The films should be deposited onto a substrate of known mechanical properties of Young’s modulus and Poisson’s ratio. These methods are used to determine the residual stresses within thin films deposited on substrate [1]1.
PDF Catalog
| PDF Pages | PDF Title |
|---|---|
| 6 | English CONTENTS |
| 7 | FOREWORD |
| 9 | 1 Scope 2 Normative references 3 Terms and definitions |
| 10 | 4 Testing methods 4.1 General 4.2 Wafer curvature method 4.2.1 General Figures Figure 1 – Schematic drawing of compressive residual stress induced curvature after depositing thin film on substrate |
| 11 | 4.2.2 Test apparatus 4.2.3 Measurement procedures 4.2.4 Reports |
| 12 | 4.3 Cantilever beam deflection method 4.3.1 General Tables Table 1 – Mandatory details for the test of wafer curvature method |
| 13 | 4.3.2 Test apparatus 4.3.3 Measurement procedures 4.3.4 Reports Figure 2 – Scheme for comprehensive residual stress induced curvature |
| 14 | Table 2 – Mandatory details for the report of beam deflection method |
| 15 | Bibliography |
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BS EN 62047-16:2015
Semiconductor devices. Micro-electromechanical devices – Test methods for determining residual stresses of MEMS films. Wafer…
