BS EN 62417:2010
$86.31
Semiconductor devices. Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
| Published By | Publication Date | Number of Pages |
| BSI | 2010 | 12 |
This present standard provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. . It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.
PDF Catalog
| PDF Pages | PDF Title |
|---|---|
| 5 | English CONTENTS |
| 6 | 1 Scope 2 Abbreviations and letter symbols 3 General description |
| 7 | 4 Test equipment 5 Test structures 6 Sample size 7 Conditions |
| 8 | 8 Procedure 8.1 Bias temperature stress 8.2 Voltage sweep 9 Criteria |
| 9 | 10 Reporting |
Related products
-
BS EN 62417:2010
Semiconductor devices. Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) Published By Publication…
