BS EN ISO 21068-2:2024
$189.07
Chemical analysis of raw materials and refractory products containing silicon-carbide, silicon-nitride, silicon-oxynitride and sialon – Determination of volatile components, total carbon, free carbon, silicon carbide, total and free silicon, free and surface silica
Published By | Publication Date | Number of Pages |
BSI | 2024 | 48 |
This document specifies analytical techniques for the determination of volatile components by thermal treatment at specified temperatures, and methods for the determination of the total carbon, free carbon, silicon carbide, total and free silicon and free and surface silica content of silicon-carbide, silicon-nitride and silicon-oxynitride containing raw materials and refractory products.
PDF Catalog
PDF Pages | PDF Title |
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2 | undefined |
11 | 4.1 General |
12 | 4.2 Determination of the loss on drying at 250 °C (wLOD250) 4.2.1 Principle 4.2.2 Apparatus 4.2.3 Procedure 4.2.4 Calculation 4.3 Determination of the loss on ignition in argon (wLOIAr) 4.3.1 Principle |
13 | 4.3.2 Apparatus 4.3.3 Test assembly 4.3.4 Reagents |
14 | 4.3.5 Procedure 4.3.6 Calculation |
15 | 5.1 Scope 5.2 Combustion techniques 5.2.1 Combustion in a resistance furnace with lead borate or tin as decomposing agent |
16 | 5.2.2 Combustion in an induction furnace (IF) with metallic powder as decomposing agent |
17 | 5.3 Detection techniques 5.3.1 Coulometry 5.3.2 Detection of the released carbon dioxide, CO2, by infrared absorption (IR) |
18 | 5.3.3 Thermal conductivity (TC) method 5.4 Expression of results 6.1 General 6.1.1 Direct methods |
23 | 6.1.2 Indirect methods |
26 | 7.1 General 7.2 Determination of silicon carbide, SiC, by indirect method 7.2.1 Principle 7.2.2 Calculation |
27 | 7.2.3 Precision 7.3 Determination of silicon carbide, SiC, by combustion methods 7.3.1 Procedure 7.3.2 Calculation 7.4 Determination of silicon carbide, SiC, by combustion at 750 °C 7.4.1 Principle 7.4.2 Residue production |
28 | 7.4.3 Determination of the total carbon content of the residue 7.4.4 Calculation |
29 | 9.1 Principle 9.2 Pretreatment with hydrochloric acid 9.3 Determination of free silicon by hydrogen evolution 9.3.1 Reagents |
30 | 9.3.2 Apparatus 9.3.3 Mass of test portion |
31 | 9.3.4 Procedure |
32 | 9.3.5 Blank test 9.3.6 Calculation |
33 | 10.1 Principle 10.2 Reagents 10.3 Apparatus |
34 | 10.4 Sample preparation 10.5 Procedure |
35 | 10.5.1 Determination 10.5.2 Calculation and expression of SiO2 content |