BS IEC 60747-6:2016 – TC:2020 Edition
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Tracked Changes. Semiconductor devices – Discrete devices. Thyristors
| Published By | Publication Date | Number of Pages |
| BSI | 2020 | 378 |
IEC 60747-6:2016 provides standards for the following types of discrete semiconductor devices: – reverse-blocking triode thyristors; – reverse-conducting (triode) thyristors; – bidirectional triodethyristors (triacs); – turn-off thyristors. This edition includes the following significant technical changes with respect to the previous edition: a) Clauses 3, 4, 5, 6, and 7 were amended with some deletions of information no longer in use or already included in other parts of the IEC 60747 series, and with some necessary additions; b) some parts of Clause 8 and Clause 9 were moved and added to Clause 7 of this third edition; c) Clause 8 and 9 were deleted in this third edition; d) Annex A was deleted. This publication is to be read in conjunction with /2.
PDF Catalog
| PDF Pages | PDF Title |
|---|---|
| 254 | English CONTENTS |
| 259 | FOREWORD |
| 261 | 1 Scope 2 Normative references 3 Terms and definitions 3.1 General |
| 262 | 3.2 Terms and definitions related to ratings and characteristics: currents Figures Figure 1 โ Peak values of on-state currents |
| 263 | 3.3 Terms and definitions related to ratings and characteristics: gate voltages and currents |
| 264 | 3.4 Terms and definitions related to ratings and characteristics: power and energy dissipation 3.4.1 General 3.4.2 Instantaneous power during a cycle |
| 265 | Figure 2 โ Partial power (dissipation) of turn-off thyristors at absolute long on-state period |
| 266 | 3.4.3 Mean power dissipation |
| 267 | 3.4.4 Energy dissipation Figure 3 โ Components of dynamic on-state energy dissipation of turn-off thyristors at absolute short on-state period |
| 268 | 3.5 Terms and definitions related to ratings and characteristics: recovery times and other characteristics 3.5.1 On-state 3.5.2 Recovery times Figure 4 โ Reverse recovery time |
| 269 | Figure 5 โ Off-state recovery time |
| 270 | 3.5.3 Times and rates of rise characterizing gate-controlled turn-on Figure 6 โ Circuit-commutated turn-off time |
| 271 | 3.5.4 Times and rates of rise characterizing gate-controlled turn-off Figure 7 โ Gate-controlled turn-on times |
| 273 | Figure 8 โ Gate-controlled turn-off times |
| 274 | 3.5.5 Recovered charges 3.6 Mechanical ratings Figure 9 โ Recovered charge Qr |
| 275 | 4 Letter symbols 4.1 General 4.2 Additional general subscripts 4.3 List of letter symbols Tables Table 1 โ Additional general subscripts |
| 276 | Table 2 โ Principal voltages, anode-cathode voltages Table 3 โ Principal currents, anode currents, cathode currents Table 4 โ Gate voltages Table 5 โ Gate currents |
| 277 | Table 6 โ Time quantities Table 7 โ Power dissipation Table 8 โ Sundry quantities |
| 278 | 5 Ratings and characteristics for thyristors 5.1 Ratings (limiting values) 5.1.1 Storage temperatures (Tstg) 5.1.2 Junction temperature (Tvj(min), Tvjm) 5.1.3 Operating ambient or case temperature (Ta or Tc) 5.1.4 Total power dissipation (Ptot or PC) 5.1.5 Gate power dissipation 5.1.6 Frequency ratings 5.1.7 Special requirements for mounting |
| 279 | 5.1.8 Principle anode-cathode voltages 5.1.9 Gate voltages |
| 280 | 5.1.10 Principal anode cathode currents Figure 10 โ Application of gate voltages for thyristors |
| 284 | Figure 11 โ Peak sinusoidal curents and typical waveforms at higher frequencies |
| 286 | Figure 12 โ Peak trapezoidal currents and typical waveforms at higher frequencies |
| 287 | 5.1.11 Peak forward gate current (IFGM) 5.2 Characteristics 5.2.1 General 5.2.2 Reverse current (IR) 5.2.3 Reverse conducting voltage (VRC) (for reverse conducting thyristors) 5.2.4 Continuous (direct) off-state current (ID) 5.2.5 On-state voltage (VT) 5.2.6 On-state characteristics (where appropriate) |
| 288 | 5.2.7 Peak sinusoidal on-state voltage (VTM) 5.2.8 Threshold voltage (VT(TO) / VTO) 5.2.9 On-state slope resistance (rT) 5.2.10 Holding current (IH) 5.2.11 Latching current (IL) 5.2.12 Repetitive peak off-state current (IDRM) 5.2.13 Repetitive peak reverse current (IRRM) |
| 289 | 5.2.14 Gate-trigger current (IGT) and gate-trigger voltage (VGT) 5.2.15 Gate non-trigger current (IGD) and gate non-trigger voltage (VGD) |
| 290 | 5.2.16 Sustaining gate current (IFGsus) for GTO only 5.2.17 Peak gate turn-off current (IRGQM) for GTO only 5.2.18 Peak tail current (IZM) for GTO only Figure 13 โ Forward gate voltage versus forward gate current |
| 291 | 5.2.19 Characteristic time intervals Figure 14 โ Examples of current and voltage wave shapes during turn-off of a thyristor under various circuit conditions |
| 293 | 5.2.20 Total power dissipation Figure 15 โ Curves with total energy dissipation Ep as parameter and sinusoidal current pulse |
| 294 | 5.2.21 Turn-on energy dissipation (EON) for GTO preferably 5.2.22 On-state energy dissipation (ET) for GTO preferably Figure 16 โ Curves with total energy dissipation Ep as parameter and trapezoidal current pulse |
| 295 | 5.2.23 Turn-off energy dissipation (EQ) for GTO preferably 5.2.24 Recovered charge (Qr) (where appropriate) 5.2.25 Peak reverse recovery current (Irrm)(where appropriate) 5.2.26 Reverse recovery time (trr) (where appropriate) 5.2.27 Thermal resistance junction to ambient (Rth(j-a)) 5.2.28 Thermal resistance junction to case (Rth(j-c)) 5.2.29 Thermal resistance case to heat sink (Rth(c-s)) Figure 17 โ Recovered charge Qr, peak reverse recovery current Irrm, reverse recovery time trr (idealized characteristics) |
| 296 | 5.2.30 Thermal resistance junction to heat sink (Rth(j-s)) 5.2.31 Transient thermal impedance junction to ambient (Zth(j-a)) 5.2.32 Transient thermal impedance junction to case (Zth(j-c)) 5.2.33 Transient thermal impedance junction to heat sink (Zth(j-s)) 6 Measuring and test methods 6.1 General 6.2 Measuring methods for electrical characteristics 6.2.1 On-state voltage (VT) |
| 297 | Figure 18 โ Circuit for measurement of on-state voltage (d.c. method) Figure 19 โ Circuit for measurement of on-state voltage (oscilloscope method) |
| 298 | Figure 20 โ Graphic representation of on-state voltage versus current characteristic (oscilloscope method) Figure 21 โ Circuit diagram for measurement of on-state voltage (pulse method) |
| 299 | 6.2.2 Repetitive peak reverse current (IRRM) |
| 300 | 6.2.3 Latching current (IL) Figure 22 โ Circuit diagram for measuring peak reverse current |
| 301 | Figure 23 โ Circuit diagram for measuring latching current |
| 302 | 6.2.4 Holding current (IH) Figure 24 โ Waveform of the latching current |
| 303 | 6.2.5 Off-state current (ID) Figure 25 โ Circuit diagram for measuring holding current |
| 304 | 6.2.6 Repetitive peak off state current (IDRM) Figure 26 โ Circuit diagram for measuring off-state current (d.c. method) Figure 27 โ Circuit diagram for measuring peak off-state current |
| 305 | 6.2.7 Gate trigger current or voltage (IGT), (VGT) Figure 28 โ Circuit diagram for measuring gate trigger current and/or voltage |
| 306 | 6.2.8 Gate non-trigger voltage (VGD) and gate non-trigger current (IGD) |
| 307 | Figure 29 โ Circuit diagram for measuring gate non-trigger current and/or voltage |
| 308 | 6.2.9 Gate controlled delay time (td) and turn-on time (tgt) Figure 30 โ Circuit diagram for measuring the gate controlled delay time and turn-on time |
| 309 | Figure 31 โ On-state current waveform of a thyristor |
| 310 | 6.2.10 Circuit commutated turn-off time (tq) Figure 32 โ Off-state voltage and current waveform of a thyristor |
| 311 | Figure 33 โ Thyristor switching waveforms |
| 312 | Figure 34 โ Diagram of basic circuit |
| 313 | 6.2.11 Critical rate of rise of off-state voltage (dv/dt(cr)) Figure 35 โ Circuit diagram for measuring critical rate of rise of off-state voltage Figure 36 โ Waveform |
| 314 | Figure 37 โ Measurement circuit for exponential rate of rise |
| 315 | 6.2.12 Critical rate of rise of commutating voltage of triacs (dv/dt(com)) |
| 316 | Figure 38 โ Measurement circuit for critical rate of rise of commutating voltage |
| 317 | Figure 39 โ Waveforms |
| 318 | Figure 40 โ Circuit diagram for high current triacs |
| 319 | Figure 41 โ Waveforms with high and low di/dt |
| 321 | 6.2.13 Recovered charge (Qr) and reverse recovery time (trr) Figure 42 โ Circuit diagram for recovered charge and reverse recovery time (half sine wave method) |
| 322 | Figure 43 โ Current waveform through the thyristor T |
| 323 | Figure 44 โ Circuit diagram for recovered charge and reverse recover time (rectangular wave method) |
| 324 | Figure 45 โ Current waveform through the thyristor T |
| 325 | 6.2.14 Circuit commutated turn-off time (tq) of a reverse conducting thyristor Figure 46 โ Circuit diagram for measuring circuit commutated turn-off time of reverse conducting thyristor |
| 326 | Figure 47 โ Current and voltage waveforms of commutated turn-off time of reverse conducting thyristor |
| 327 | 6.2.15 Turn-off behaviour of turn-off thyristors (for GTO) |
| 328 | Figure 48 โ Circuit diagram to measure turn-off behaviour of turn-off thyristors Figure 49 โ Voltage and current waveforms during turn-off |
| 330 | 6.2.16 Total energy dissipation during one cycle (for fast switching thyristors) |
| 331 | 6.3 Verification test methods for ratings (limiting values) 6.3.1 Non-repetitive peak reverse voltage (VRSM) Figure 50 โ Circuit diagram for measuring non-repetitive peak reverse voltage rating |
| 332 | 6.3.2 Non-repetitive peak off-state voltage (VDSM) Figure 51 โ Circuit diagram for measuring non-repetitive peak off-state voltage rating |
| 333 | 6.3.3 Surge (non-repetitive) on-state current (ITSM) |
| 334 | Figure 52 โ Circuit diagram for measuring surge (non-repetitive) on-state current rating |
| 335 | 6.3.4 On-state current ratings of fast-switching thyristors |
| 336 | Figure 53 โ Basic circuit and test waveforms for sinusoidal on-state current with reverse voltage |
| 337 | Figure 54 โ Extended circuit diagram for measuring sinusoidal on-state current with reverse voltage |
| 339 | Figure 55 โ Basic circuit and test waveforms for sinusoidal on-state current with reverse voltage suppressed. |
| 340 | Figure 56 โ Extended circuit diagram for measuring sinusoidal on-state current with reverse voltage suppressed |
| 342 | Figure 57 โ Basic circuit diagram and test waveforms for trapezoidal on-state current with reverse voltage applied |
| 344 | Figure 58 โ Basic circuit and test waveforms for trapezoidal on-state current with reverse voltage suppressed |
| 346 | 6.3.5 Critical rate of rise of on-state current (di/dt(cr)) Figure 59 โ Circuit diagram for measuring critical rate of rise of on-state current |
| 348 | Figure 60 โ On-state current waveform for di/dt rating |
| 349 | 6.3.6 Peak case non-rupture current (IRSMC) Figure 61 โ Circuit diagram for measuring peak case non-rupture current Figure 62 โ Waveform of the reverse current iR through the thyristor under test |
| 350 | 6.4 Measuring methods for thermal characteristics 6.4.1 General 6.4.2 Measurement of the case temperature |
| 351 | 6.4.3 Measuring methods for thermal resistance (Rth) and transient thermal impedance (Zth) 6.4.4 Measurement method of thermal resistance and impedance (Method A) |
| 352 | Figure 63 โ Basic circuit diagram for the measurement of Rth (Method A) |
| 353 | Figure 64 โ Basic circuit diagram for the measurement of Zth(t) (Method A) |
| 354 | 6.4.5 Measurement method of thermal resistance and impedance (Method B) |
| 355 | Figure 65 โ Superposition of the reference current pulse on different on-state currents |
| 356 | Figure 66 โ Waveforms for power dissipation and virtual junction temperature (general case) |
| 358 | Figure 67 โ Calibration curve |
| 360 | Figure 68 โ Basic circuit diagram for the measurement of Rth (Method B) |
| 361 | Figure 69 โ Waveforms for measuring thermal resistance |
| 363 | Figure 70 โ Basic circuit diagram for the measurement of Zth(t) (Method B) Figure 71 โ Waveforms for measuring transient thermal impedance |
| 365 | 6.4.6 Measurement method of thermal resistance and impedance (Method C, for GTO thyristors only) |
| 366 | Figure 72 โ Basic circuit diagram for the measurement of Rth (Method C) Figure 73 โ Waveforms for measuring thermal resistance |
| 368 | Figure 74 โ Basic circuit diagram for the measurement of Zth(t) (Method C) Figure 75 โ Waveforms for measuring the transient thermal impedance of a gate turn-off thyristor |
| 369 | 6.4.7 Measurement method of thermal resistance and impedance (Method D, for GTO thyristors only) |
| 370 | Figure 76 โ Calibration and measurement arrangement for the heat flow method |
| 372 | 7 Requirements for type tests and routine tests, marking of thyristors and endurance tests 7.1 Type tests 7.2 Routine tests |
| 373 | 7.3 Measuring and test methods 7.4 Marking of thyristors 7.5 Endurance tests Table 9 โ Minimum type and routine tests for reverse-blocking triode thyristors |
| 374 | 7.5.3 Acceptance-defining characteristics and criteria for endurance tests 7.5.4 Acceptance-defining characteristics and criteria for reliability tests 7.5.5 Procedure in case of a testing error Table 10 โ Acceptance-defining characteristics after endurance tests |
| 375 | Table 11 โ Conditions for endurance tests |
| 376 | Bibliography |
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BS IEC 60747-6:2016
Semiconductor devices – Discrete devices. Thyristors Published By Publication Date Number of Pages BSI 2016โฆ
