BS IEC 62047-35:2019:2021 Edition
$142.49
Semiconductor devices. Micro-electromechanical devices – Test method of electrical characteristics under bending deformation for flexible electromechanical devices
Published By | Publication Date | Number of Pages |
BSI | 2021 | 24 |
This part of IEC 62047 specifies the test method of electrical characteristics under bending deformation for flexible electromechanical devices. These devices include passive micro components and/or active micro components on the flexible film or embedded in the flexible film. The desired in-plane dimensions of the device for the test method ranges typically from 1 mm to 300 mm and the thickness ranges from 10 μm to 1 mm, but these are not limiting values. The test method is so designed as to bend devices in a quasi-static manner monotonically up to the maximum possible curvature, i.e. until the device is completely folded, so that the entire degradation behaviour of the electric property under bending deformation is obtained. This document is essential to estimate the safety margin under a certain bending deformation and indispensable for reliable design of the product employing these devices.
PDF Catalog
PDF Pages | PDF Title |
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2 | undefined |
4 | English CONTENTS |
6 | FOREWORD |
8 | INTRODUCTION |
9 | 1 Scope 2 Normative references 3 Terms and definitions 3.1 General 3.2 Loading configurations |
10 | 3.3 Measure of loading levels 4 Test piece 4.1 General 4.2 Shape of a test piece |
11 | 5 Test method 5.1 Principle Figures Figure 1 – Schematic illustration of a flexible MEMS test piece |
12 | 5.2 Test apparatus 5.3 Procedure 5.3.1 Testing conditions Figure 2 – Principle of folding test |
13 | 5.3.2 Selection of bending direction 5.3.3 Determination of bending axes 5.3.4 Measurement of test piece dimensions |
14 | 5.3.5 Measurement of folding distance 5.3.6 Number of tests 5.3.7 Instrumentation Figure 3 – Selection of bending axis |
15 | 5.3.8 End of testing 6 Test report 6.1 General 6.2 Bending direction(s) and in-plane locations of bending axes |
16 | 6.3 Dimensions of the test piece 6.4 Performance degradation characteristics with the folding distance Figure 4 – Illustration of performance degradation in the test report |
17 | 6.5 Distance at a defined operation limit 6.6 Testing conditions |
18 | Annex A (normative)Example of flexible MEMS device Figure A.1 – Target part and loading configuration of test piece fororganic thin-film transistor device |
19 | Figure A.2 – Device performance degradation behaviour and distances at defined operation limits for an organic thin-film effect transistor |
20 | Annex B (informative)Controls for appropriate performance instrumentationand setting of bending axis position B.1 Loading wall design with electric accessing cavity and fine adjustment capability for bending axis location during the test Figure B.1 – Loading point adjustment mechanism |
21 | B.2 Special arrangement of the target parts of device to obtain a number of bending axis locations in a single testing Figure B.2 – Cascade arrangement of target parts for efficient testing |
22 | Annex C (informative)Loading principle for extremely thin soft devices Figure C.1 – Bending configuration |
23 | Annex D (informative)Issues related to local loading severity D.1 Possible inhomogeneity in local curvature and parameter of loading D.2 Possible variations of loading parameter Figure D.1 – Possibility of inhomogeneous local curvature distribution |