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BS ISO 21820:2021

BS ISO 21820:2021

$167.15

Fine ceramics (advanced ceramics, advanced technical ceramics). Ultraviolet photoluminescence image test method for analysing polytypes of boron- and nitrogen-doped SiC crystals

Published By Publication Date Number of Pages
BSI 2021 36
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This document specifies a test method for determining the polytypes and their ratios in silicon carbide (SiC) wafers or bulk crystals using ultraviolet photoluminescence (UVPL) imaging. The range of SiC is limited to semiconductor SiC doped with nitrogen and boron to have a deep acceptor level and a shallow donor level, respectively. The SiC wafers or bulk crystals discussed in this document typically show electrical resistivities ranging from 10?3 ohm · cm to 10?2 ohm · cm, applicable to power electronic devices.

This method is applicable to the SiC-crystal 4H, 6H and 15R polytypes that contain boron and nitrogen as acceptor and donor, respectively, at concentrations that produce donor-acceptor pairs (DAPs) to generate UVPL. In 4H-SiC the boron and nitrogen concentrations typically range from 1016 cm?3 to 1018 cm?3. Semi-insulating SiC is not of concern because it usually contains minimal boron and nitrogen; therefore deep level cannot be achieved.

PDF Catalog

PDF Pages PDF Title
2 undefined
6 Foreword
7 Introduction
9 1 Scope
2 Normative references
3 Terms and definitions
10 4 Symbols
5 Principle
6 Apparatus
11 7 Sampling
8 Procedure
8.1 Cleaning of SiC wafer surface
8.2 Optical setup
12 8.3 Measurement
14 9 Expression of results
9.1 Expression of boundaries of polytypes in CIE 1931 colour space
9.2 Transformation of the UVPL image to CIE 1931 colour space with polytype boundaries
15 9.3 Determination of polytype
10 Test report
17 Annex A (informative) Determination of polytypes
25 Annex B (informative) Determination of polytypes
33 Annex C (informative) Penetration depth of SiC
34 Annex D (informative) Calibration
35 Bibliography

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BS ISO 21820:2021
$167.15