BSI 24/30497109 DC:2024 Edition
$10.54
BS EN IEC 63068-5 Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices – Part 5. Test method for defects using X-ray topography
Published By | Publication Date | Number of Pages |
BSI | 2024 | 32 |
Status | Definitive |
---|---|
Pages | 32 |
Publication Date | 2024-07-12 |
Standard Number | 24/30497109 DC |
Title | BS EN IEC 63068-5 Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices – Part 5. Test method for defects using X-ray topography |
Descriptors | Semiconductor materials, Semiconductor technology, X-rays |
Publisher | BSI |
Committee | EPL/47 |
ICS Codes | 31.080.99 - Other semiconductor devices |