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BSI PD IEC TS 62607-8-1:2020

BSI PD IEC TS 62607-8-1:2020

$142.49

Nanomanufacturing. Key control characteristics – Nano-enabled metal-oxide interfacial devices. Test method for defect states by thermally stimulated current

Published By Publication Date Number of Pages
BSI 2020 32
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There are two types of thermally stimulated current (TSC) measurement methods, classified by the origin of the current. One is generated by the detrapping of charges. The other one is generated by depolarization. This part of IEC 62607 focuses on the former method, and specifies the measurement method to be developed for determining defect states of nanoenabled metal-oxide interfacial devices.

This document includes:

  • outlines of the experimental procedures used to measure TSC,

  • methods of interpretation of results and discussion of data analysis, and

  • case studies.

PDF Catalog

PDF Pages PDF Title
2 undefined
4 CONTENTS
6 FOREWORD
8 INTRODUCTION
9 1 Scope
2 Normative references
3 Terms, definitions, and abbreviated terms
3.1 Terms and definitions
10 3.2 Abbreviated terms
4 Measurement of TSC
4.1 General
4.2 Sample preparation
4.3 Experimental procedures
Figures
Figure 1 – Structure of TSC measurement device
11 5 Reporting data
6 Data analysis / interpretation of results
6.1 General
Figure 2 – Visualization of TSC measurement sequence
Tables
Table 1 – TSC measurement sequence steps and parameters
12 6.2 Peak method [1]
6.3 Tstart–Tstop method [2] [3]
6.4 Initial rise method [4]
13 Annex A (informative)Case study
A.1 TSC measurement of Au/GaAs (reference sample)
A.1.1 General
Figure A.1 – Photos of (a) the Au electrode configurationon GaAs reference sample, and (b) sample setting
14 Figure A.2 – Structure of TSC measurement device
15 Figure A.3 – TSC data comparison by samples
Table A.1 – TSC measurement sequence steps and parameters / case study
16 A.1.2 Estimating activation energy of defect states by peak method
Figure A.4 – TSC data comparison by heating rate
18 Figure A.5 – Determination of TSC peak positions using the second derivative curves
19 Figure A.6 – Arrhenius plots of (a) ln(Tm2/β) vs. 1/Tm and (b) ln(Tm4/β) vs. 1/Tm
Table A.2 – Activation energies of T1 to T6 for y = ln (Tm2/β)
Table A.3 – Activation energies of T1 to T6 for y = ln (Tm4/β)
20 A.2 TSC measurement of Ir/Ta2O5
A.2.1 General
Table A.4 – TSC measurement sequence steps and parameters / case study (2)
21 Figure A.7 – TSC data comparison by samples
Table A.5 – Conditions of Ta2O5 sputtering deposition
22 Figure A.8 – TSC data comparison of Sample A by heating rate
Figure A.9 – TSC data comparison of Sample B by heating rate
23 Figure A.10 – TSC data comparison of Sample C by heating rate
24 Figure A.11 – TSC data comparison by carrier injection method (Samples A, B and C)
25 A.2.2 Estimating activation energy of defect states by Peak method
Figure A.12 – Samples A, B and C: Determination of TSC peak positionsusing the second derivative curves
26 Figure A.13 – Arrhenius plots for TA1, Sample A
Table A.6 – Activation energies of Samples A, B and C
28 Annex B (informative)Possible methods to analyse TSC spectra
B.1 Peak method
B.2 Tstart–Tstop method
Figure B.1 – Peak method
29 B.3 Initial rise method
Figure B.2 – Tstart–Tstop method
30 Figure B.3 – Determination of trap level energy through initial rise method
31 Bibliography

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BSI PD IEC TS 62607-8-1:2020
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