IEEE C62.35 1989

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IEEE Standard Test Specifications for Avalanche Junction Semiconductor Surge Protective Devices

Published By	Publication Date	Number of Pages
IEEE	1989	22

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Description

New IEEE Standard – Inactive – Superseded. A two-terminal avalanche junction surge suppressor for surge-protective application on systems with dc to 420-Hz frequency and voltages equal to or less than 1000 V rms or 1200 V dc is considered. The device is a single package that may be assembled from any combination of series and/or parallel diode chips. Definitions, service conditions, and a series of test criteria for determining its electrical characteristics are provided. These devices are used as surge diverters for limiting transient overvoltages in power and communications circuits.

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PDF Pages	PDF Title
1	Title page
3	Introduction Participants
5	CONTENTS
7	1. Scope
8	2. Definitions of Rated and Other Parameters 2.1 Rated Parameter Values 2.2 Definitions
15	3. Service Conditions 3.1 Normal Service Conditions 3.2 Unusual Service Conditions
16	4. Standard Design Test Procedure 4.1 Standard Design Test Criteria 4.2 Statistical Procedures 4.3 Test Conditions 4.4 Clamping Voltage Test (Vc) (see Fig 2)
17	4.5 Rated Multiple Peak Impulse Current (Ipp) (see Fig 2) 4.6 Rated Stand-off Voltage (VWM) (see Fig 3) and Rated Working RMS Voltage [VWM)RMS)] (see Fig 3) 4.7 Maximum Stand-By Current (ID) (see Fig 3) 4.8 Rated Peak Single Treansient (ISM) (see Fig 2) 4.9 Lifetime Rated Pulse Current Tests (see Fig 2)
18	5. Failure Modes 5.1 Degradation Failure Mode 5.2 Short Circuit Failure Mode 5.3 Open Circuit Failure Mode 5.4 High Clamping Voltage Failure Mode
19	5.5 “Fail-Safe” Operation 6. Derived Parameters and Other Test Procedures 6.1 Breakdown Voltage (Avalanche) Test [V(BR)] (see Fig 4) 6.2 Rated Multiple Peak Pulse Power Dissipation (PPPM) 6.3 Rated Average Power Dissipation [PM(AV)] 6.4 Capacitance Test (C)
20	6.5 Peak Overshoot Voltage (Vos) (See Fig 5)
21	6.6 Response Time Overshoot Duration (see Fig 5) 6.7 Rated Forward Surge Current (IFSM) (see Fig 3) 6.8 Forward Voltage (VFS) 6.9 Temperature Derating (see Fig 6) 6.10 Thermal Resistance (R8JA or R8JC or R8JL)
22	8.11 Temperature Coefficient of Breakdown Voltage [°cV(BR)] 7. Bibliography

Additional information

Standard Title	IEEE Standard Test Specifications for Avalanche Junction Semiconductor Surge Protective Devices
Published Code	IEEE
Publication Date	1989
Pages Count	22

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IEEE C62.35 1989

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