JIS C 2162:2010
$16.90
Test method of long-term reliability of gate insulator for SiC devices at high temperature
| Published By | Publication Date | Number of Pages |
| JIS | 2010-03-23 | 14 |
This Japanese Industrial Standard specifies the matters related to the "long-term reliability test of gate insulator for silicon carbide (SiC) devices at high temperature" (hereafter referred to as the "long-term reliability test"), namely, the test apparatus used, the structure of a sample, the method for eliminating the effect of defects in an SiC substrate and the test procedure.
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