29.045 – Semiconducting materials – PDF Standards Store ?u= Wed, 06 Nov 2024 02:23:05 +0000 en-US hourly 1 https://wordpress.org/?v=6.7.1 ?u=/wp-content/uploads/2024/11/cropped-icon-150x150.png 29.045 – Semiconducting materials – PDF Standards Store ?u= 32 32 JIS H 0610:1966 (R1983) ?u=/product/publishers/jis/jis-h-06101966-r1983/ Wed, 06 Nov 2024 02:23:05 +0000 Method of Measurement of Etch Pit Density of Germanium Crystal
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JIS 1966-12-01 7
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Method of Measurement of Etch Pit Density of Germanium Crystal
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JIS 1966-12-01 7
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JIS H 0607:1978 (R1983) ?u=/product/publishers/jis/jis-h-06071978-r1983/ Wed, 06 Nov 2024 02:23:05 +0000 Determination of Conductivity Type in Germanium by Thermoelectromotive Method
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JIS 1978-03-01 5
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Determination of Conductivity Type in Germanium by Thermoelectromotive Method
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JIS 1978-03-01 5
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JIS H 0604:1995 ?u=/product/publishers/jis/jis-h-06041995/ Wed, 06 Nov 2024 02:23:02 +0000 Measurement of Minority-Carrier Lifetime in Silicon Single Crystal by Photoconductive Decay Method
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JIS 1995-07-01 9
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Measurement of Minority-Carrier Lifetime in Silicon Single Crystal by Photoconductive Decay Method
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JIS 1995-07-01 9
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JIS H 0603:1978 (R1983) ?u=/product/publishers/jis/jis-h-06031978-r1983/ Wed, 06 Nov 2024 02:23:01 +0000 Measurement of Minority Carrier Life Time in Germanium by Photoconductive Decay Method
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JIS 1978-03-01 7
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Measurement of Minority Carrier Life Time in Germanium by Photoconductive Decay Method
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JIS 1978-03-01 7
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JIS H 0601:1962 (R1983) ?u=/product/publishers/jis/jis-h-06011962-r1983/ Wed, 06 Nov 2024 02:22:59 +0000 Testing Methods of Resistivity for Germanium
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JIS 1962-06-01 6
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Testing Methods of Resistivity for Germanium
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JIS 1962-06-01 6
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IEC TR 60146-1-2:2019 ?u=/product/publishers/iec/iec-tr-60146-1-22019/ Tue, 05 Nov 2024 20:00:17 +0000 Semiconductor converters - General requirements and line commutated converters - Part 1-2: Application guidelines
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IEC 2019-10-22 108
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IEC TR 60146-1-2:2019 gives guidance on variations to the specifications given in IEC 60146-1-1:2009 to enable the specification to be extended in a controlled form for special cases. Background information is also given on technical points, which facilitates the use of IEC 60146-1-1:2009. This technical report primarily covers line commutated converters and is not in itself a specification, except as regards certain auxiliary components, in so far as existing standards may not provide the necessary data. This fifth edition includes the following significant technical changes with respect to the previous edition:
a) addition of annexes concerning the applications of converter transformers and of fuses for overcurrent protection;
b) changes of calculation methods related the inductive voltage regulation and changes of description on transformer losses to be consistent with the latest transformer standards;
c) addition and updates of references based on the latest information.

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IEC TR 60146-1-2:2011 ?u=/product/publishers/iec/iec-tr-60146-1-22011/ Tue, 05 Nov 2024 20:00:16 +0000 Semiconductor converters - General requirements and line commutated converters - Part 1-2: Application guide
Published By Publication Date Number of Pages
IEC 2011-01-26 88
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IEC 60146-1-2:2011(E) gives guidance on variations to the specifications given in IEC 60146-1-1:2009 to enable the specification to be extended in a controlled form for special cases. Background information is also given on technical points which should facilitate the use of IEC 60146-1-1:2009. This technical report primarily covers line commutated converters and is not in itself a specification, except as regards certain auxiliary components, in so far as existing standards may not provide the necessary data. This fourth edition includes the following main changes with respect to the previous edition:
a) re-edition of the whole document according to the current Directives;
b) correction of some errors.

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IEC 62899-503-3:2021 ?u=/product/publishers/iec/iec-62899-503-32021/ Tue, 05 Nov 2024 19:55:08 +0000 Printed electronics - Part 503-3: Quality assessment - Measuring method of contact resistance for the printed thin film transistor - Transfer length method
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IEC 2021-08-24 18
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IEC 62899-503-3:2021(E) specifies a measuring method of contact resistance for printed thin film transistors (TFTs) by the transfer length method (TLM). The method requires the fabrication of a test element group (TEG) with varying channel length (L) between source and drain electrodes. The method is intended for quality assessment of TFT electrode contacts and is suited for determining whether the contact resistance lies within a desired range.

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IEC 62899-503-1:2020 ?u=/product/publishers/iec/iec-62899-503-12020/ Tue, 05 Nov 2024 19:55:07 +0000 Printed electronics - Part 503-1: Quality assessment - Test method of displacement current measurement for printed thin-film transistor
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IEC 2020-05-27 20
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IEC 62899-503-1:2020(E) specifies a test method for displacement current measurement (DCM) for printed thin film transistors (TFTs) or organic thin film transistors (OTFTs).

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IEC 62899-203:2018 ?u=/product/publishers/iec/iec-62899-2032018/ Tue, 05 Nov 2024 19:54:56 +0000 Printed electronics - Part 203: Materials - Semiconductor ink
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IEC 2018-09-28 26
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IEC 62899-203:2018(E) defines terms and specifies standard methods for characterisation and evaluation. This document is applicable to semiconductor inks and semiconductive layers that are made from semiconductor inks.

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