This document is an annex to SAE Technical Report SSB-1 (the latest revision).

This document provides reference information and guidance concerning methods used by the semiconductor industry and original equipment manufacturers related to radiation hardness assessments. This document is broken into three primary sections. Section 3 discusses part characterization with focus on selection criteria and acceptance testing. Section 4 discusses design hardening for piece parts with focus on degraded design limits and radiation design margin. The last section, Section 5, of this report is on hardness assurance inspection and test. This section discusses total ionizing dose, displacement damage and single event effects testing in detail.

This document is an annex to EIA Engineering Bulletin SSB-1, Guidelines for Using Plastic Encapsulated Microcircuits and Semiconductors in Military, Aerospace and Other Rugged Applications (the latest revision).

Failure-Mechanism-Driven Reliability Monitoring draws upon the concepts and implementation of line controls, process stability, and effective monitoring programs in lieu of qualifying a product based solely on a fixed list of tests. A supplier must identify those failure mechanisms that may be actuated through a given product / process change(s), and must design and implement reliability tests adequate to assess the impact of those failure mechanisms on system level reliability. In order for this to be effective, the supplier establishes a thorough understanding of and linkage to their reliability monitoring program. Statistical Reliability Monitoring (SRM) is a statistically based methodology for monitoring and improving reliability; it involves identification and classification of failure mechanisms, development and use of monitors, and investigation of failure kinetics allowing prediction of failure rate at use conditions. Failure kinetics are the characteristics of failure for a given physical failure mechanism, including (where applicable) acceleration factor, derating curve, activation energy, median life, standard deviation, characteristic life, instantaneous failure rate, etc.

The failure rate of semiconductor devices is inherently low. As a result, the semiconductor industry uses a technique called accelerated testing to assess device reliability. Elevated stresses are used to produce the same failure mechanisms as would be observed under normal use conditions, but in a shorter time period. Acceleration factors are used by device manufacturers to estimate failure rates based on the results of accelerated testing. The objective of this testing is to identify these failure mechanisms and eliminate them as a cause of failure during the useful life of the product.

This document provides reference information concerning methods commonly used by the semiconductor industry to estimate failure rates from accelerated test results. These methods are frequently used by OEMs in conjunction with physics of failure reliability analysis to assess the suitability of plastic encapsulated microcircuits and semiconductors for specific end use applications.

This document is an annex to EIA Engineering Bulletin SSB-1, Guidelines for Using Plastic Encapsulated Microcircuits and Semiconductors in Military, Aerospace and Other Rugged Applications (the latest revision).

This document provides reference information concerning acceleration factors commonly used by device manufacturers to model failure rates in conjunction with statistical reliability monitoring. These acceleration factors are frequently used by OEMs in conjunction with physics of failure reliability analysis to assess the suitability of plastic encapsulated microcircuits and semiconductors for specific end use applications.

This document is an annex to EIA Engineering Bulletin SSB-1, Guidelines for Using Plastic Encapsulated Microcircuits and Semiconductors in Military, Aerospace and Other Rugged Applications (the latest revision).

The scope of this document is to establish the recommended minimum qualification and monitoring testing of plastic encapsulated microcircuits and discrete semiconductors suitable for potential use in many rugged, military, severe, or other environments.

This document is an annex to EIA Engineering Bulletin SSB-1, Guidelines for Using Plastic Encapsulated Microcircuits and Semiconductors in Military, Aerospace and Other Rugged Applications.

This document provides reference information concerning the environmental stresses associated with tests specifically designed to apply to (or have unique implications for) plastic encapsulated microcircuits and semiconductors, and the specific failures induced by these environmental stresses.

This SAE Standard applies to cranes which are equipped to adjust the boom angle by hoisting and lowering means through rope reeving.