This part of IEC 62751 gives the detailed method to be adopted for calculating the power losses in the valves for an HVDC system based on the \u201cmodular multi-level converter\u201d, where each valve in the converter consists of a number of self-contained, two-terminal controllable voltage sources connected in series. It is applicable both for the cases where each modular cell uses only a single turn-off semiconductor device in each switch position, and the case where each switch position consists of a number of turn-off semiconductor devices in series (topology also referred to as \u201ccascaded two-level converter\u201d). The main formulae are given for the two-level \u201chalf-bridge\u201d configuration but guidance is also given in Annex A as to how to extend the results to certain other types of MMC building block configuration.<\/p>\n
The standard is written mainly for insulated gate bipolar transistors (IGBTs) but may also be used for guidance in the event that other types of turn-off semiconductor devices are used.<\/p>\n
Power losses in other items of equipment in the HVDC station, apart from the converter valves, are excluded from the scope of this standard.<\/p>\n
This standard does not apply to converter valves for line-commutated converter HVDC systems.<\/p>\n
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| 5<\/td>\n | Annex ZA(normative)Normative references to international publicationswith their corresponding European publications <\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":" Power losses in voltage sourced converter (VSC) valves for high-voltage direct current (HVDC) systems – Modular multilevel converters<\/b><\/p>\n |