This part of IEC TS 62607, which is a Technical Specification, specifies sample structures for evaluating a wide range of charge carrier concentration in organic\/nano materials. This specification is provided for both capacitance-voltage (C-V) measurements in metal\/insulator\/semiconductor stacking structures and Hall-effect measurements with the van der Pauw configuration. Criteria for choosing measurement methods of charge carrier concentration in organic semiconductor layers are also given in this document.<\/p>\n
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| 2<\/td>\n | undefined <\/td>\n<\/tr>\n | ||||||
| 4<\/td>\n | CONTENTS <\/td>\n<\/tr>\n | ||||||
| 5<\/td>\n | FOREWORD <\/td>\n<\/tr>\n | ||||||
| 7<\/td>\n | INTRODUCTION <\/td>\n<\/tr>\n | ||||||
| 8<\/td>\n | 1 Scope 2 Normative references 3 Terms and definitions 4 Sample structures 4.1 Metal\/insulator\/semiconductor (MIS) structure <\/td>\n<\/tr>\n | ||||||
| 9<\/td>\n | 4.2 Thin-film specimens with the van der Pauw configuration Figures Figure 1 \u2013 Typical metal\/insulator\/semiconductor (MIS) structures Figure 2 \u2013 An organic MIS structure favourable for capacitance-voltage measurements <\/td>\n<\/tr>\n | ||||||
| 10<\/td>\n | 5 Criteria for choosing a method for measuring carrier concentration in organic semiconductor layers 6 Appropriate data formats Figure 3 \u2013 Sample structures for Hall-effect measurementwith the van der Pauw configuration <\/td>\n<\/tr>\n | ||||||
| 11<\/td>\n | Table 1 \u2013 Possible data format to be given together withcarrier concentrations obtained with capacitance-voltage measurements Table 2 \u2013 Possible data format to be given together withcarrier concentrations obtained with the Hall-effect measurements <\/td>\n<\/tr>\n | ||||||
| 12<\/td>\n | Annex A (informative)Case study of carrier concentration measurements of organic materials A.1 Procedure of capacitance-voltage (C-V) measurement Figure A.1 \u2013 Equivalent circuit model for capacitance-voltagemeasurement with MIS structure <\/td>\n<\/tr>\n | ||||||
| 13<\/td>\n | A.2 Capacitance-voltage measurement for unoptimized pentacene MIS structures Figure A.2 \u2013 Typical capacitance-voltage curves observedfor MIS structures with organic semiconductor films <\/td>\n<\/tr>\n | ||||||
| 14<\/td>\n | Figure A.3 \u2013 Capacitance-voltage curves obtainedfor the MIS structure with 70-nm-thick-pentacene film <\/td>\n<\/tr>\n | ||||||
| 15<\/td>\n | A.3 Influences of semiconductor layer thickness and electrode contact conditions on C-V measurements <\/td>\n<\/tr>\n | ||||||
| 16<\/td>\n | A.4 Capacitance-voltage measurement for a pentacene MIS structure with an ultrathin insulator <\/td>\n<\/tr>\n | ||||||
| 18<\/td>\n | Figure A.5 \u2013 Capacitance-voltage curves obtained for a pentaceneMIS structure with an ultrathin SAM-modified AlOx insulator <\/td>\n<\/tr>\n | ||||||
| 19<\/td>\n | A.5 Procedure of Hall-effect measurement <\/td>\n<\/tr>\n | ||||||
| 20<\/td>\n | A.6 Hall-effect measurement for organic semiconductor single-crystalline layers <\/td>\n<\/tr>\n | ||||||
| 21<\/td>\n | Figure A.6 \u2013 Hall-effect measurement results for rubrenesingle-crystalline layer doped with ferric chloride <\/td>\n<\/tr>\n | ||||||
| 22<\/td>\n | Bibliography <\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":" Nanomanufacturing. Key control characteristics – Thin-film organic\/nano electronic devices. Measurements of charge carrier concentration<\/b><\/p>\n |