{"id":434849,"date":"2024-10-20T07:46:26","date_gmt":"2024-10-20T07:46:26","guid":{"rendered":"https:\/\/pdfstandards.shop\/product\/uncategorized\/bsi-23-30451646-dc\/"},"modified":"2024-10-26T14:44:43","modified_gmt":"2024-10-26T14:44:43","slug":"bsi-23-30451646-dc","status":"publish","type":"product","link":"https:\/\/pdfstandards.shop\/product\/publishers\/bsi\/bsi-23-30451646-dc\/","title":{"rendered":"BSI 23\/30451646 DC"},"content":{"rendered":"
PDF Pages<\/th>\n | PDF Title<\/th>\n<\/tr>\n | ||||||
---|---|---|---|---|---|---|---|
7<\/td>\n | FOREWORD <\/td>\n<\/tr>\n | ||||||
9<\/td>\n | 1 Scope 2 Normative references 3 Terms and definitions <\/td>\n<\/tr>\n | ||||||
17<\/td>\n | 4 Letter symbols 4.1 General 4.2 List of letter symbols <\/td>\n<\/tr>\n | ||||||
18<\/td>\n | 5 Essential ratings and characteristics (properties) 5.1 General <\/td>\n<\/tr>\n | ||||||
19<\/td>\n | 5.2 Ratings (limiting values) 5.2.1 Storage temperature (Tstg) 5.2.2 Operating ambient, case, heatsink or junction temperature (Ta, Tc, Ts or Tvj) 5.2.3 Non-repetitive peak reverse voltage (VRSM) 5.2.4 Repetitive peak reverse voltage (VRRM) (where appropriate) 5.2.5 Continuous (direct) reverse voltage (VR) (where appropriate) 5.2.6 Forward currents 5.2.6.1 Mean forward current (IF(AV)) 5.2.6.2 RMS forward current (IF(RMS)) 5.2.6.3 Continuous (direct) forward current 5.2.7 Repetitive peak forward current (IFRM) (where appropriate) 5.2.8 Non-repetitive surge forward current (IFSM) <\/td>\n<\/tr>\n | ||||||
20<\/td>\n | 5.2.9 I2t value (of surge forward current) (I2t) 5.2.10 Peak case non-rupture current (IRSMC) (where appropriate) 5.2.11 Reverse power dissipation (for avalanche rectifier diodes) 5.2.11.1 Non-repetitive surge reverse power dissipation (PRSM) (for avalanche rectifier diodes) 5.2.11.2 Repetitive peak reverse power dissipation (PRRM) (for avalanche rectifier diodes) 5.2.11.3 Mean reverse power dissipation (PR(AV)) (for avalanche rectifier diodes) 5.2.12 Special requirements for mounting 5.2.12.1 Mounting torque (M) (where appropriate) 5.2.12.2 Clamping force (F) for disc type diodes (where appropriate) <\/td>\n<\/tr>\n | ||||||
21<\/td>\n | 5.3 Characteristics (properties) 5.3.1 General 5.3.2 Forward voltages 5.3.2.1 Continuous (direct) forward voltage 5.3.2.2 Peak forward voltage (VFM) 5.3.3 Breakdown voltage (V(BR)) (of an avalanche rectifier diode) 5.3.4 Continuous (direct) reverse current (IR(D)) 5.3.5 Repetitive peak reverse current (IRRM) (where appropriate) 5.3.6 Reverse recovery characteristics (where appropriate) 5.3.6.1 Recovered charge (Qr) (where appropriate) <\/td>\n<\/tr>\n | ||||||
22<\/td>\n | 5.3.6.2 Total capacitive charge (QC) (where appropriate) 5.3.6.3 Peak reverse recovery current (Irrm) (where appropriate) 5.3.6.4 Reverse recovery time (trr) (where appropriate) 5.3.6.5 Reverse recovery energy (Err) (where appropriate) 5.3.6.6 Reverse recovery softness factor (Srr) (where appropriate) 5.3.7 Forward recovery characteristics (where appropriate) 5.3.7.1 Forward recovery time (tfr) (where appropriate) <\/td>\n<\/tr>\n | ||||||
23<\/td>\n | 5.3.7.2 Peak forward recovery voltage (Vfrm) (where appropriate) 5.3.8 Thermal resistance (Rth) 5.3.9 Transient thermal impedance (Zth(t)) (where appropriate) 6 Measuring and test methods 6.1 General 6.2 Measuring methods for electrical characteristics 6.2.1 Forward voltage 6.2.1.1 DC method (for low current diodes) <\/td>\n<\/tr>\n | ||||||
24<\/td>\n | 6.2.1.2 AC method <\/td>\n<\/tr>\n | ||||||
25<\/td>\n | 6.2.1.3 Pulse method <\/td>\n<\/tr>\n | ||||||
26<\/td>\n | 6.2.2 Breakdown voltage (V(BR)) of avalanche rectifier diodes <\/td>\n<\/tr>\n | ||||||
27<\/td>\n | 6.2.3 Reverse current (IR) <\/td>\n<\/tr>\n | ||||||
28<\/td>\n | 6.2.4 Repetitive peak reverse current (IRRM) <\/td>\n<\/tr>\n | ||||||
29<\/td>\n | 6.2.5 Recovered charge (Qr), reverse recovery time (trr), reverse recovery energy (Err) and softness factor (Srr) 6.2.5.1 Half sinusoidal method <\/td>\n<\/tr>\n | ||||||
31<\/td>\n | 6.2.5.2 Rectangular method <\/td>\n<\/tr>\n | ||||||
33<\/td>\n | 6.2.6 Total capacitive charge (QC) <\/td>\n<\/tr>\n | ||||||
34<\/td>\n | 6.2.7 Forward recovery time (tfr) and peak forward recovery voltage (Vfrm) <\/td>\n<\/tr>\n | ||||||
36<\/td>\n | 6.3 Measuring methods for thermal properties 6.3.1 General 6.3.2 Thermal resistance (Rth) and transient thermal impedance (Zth(t)) <\/td>\n<\/tr>\n | ||||||
39<\/td>\n | 6.4 Verification test methods for ratings (limiting values) 6.4.1 Non-repetitive peak reverse voltage (VRSM) <\/td>\n<\/tr>\n | ||||||
40<\/td>\n | 6.4.2 Non-repetitive surge forward current (IFSM) <\/td>\n<\/tr>\n | ||||||
41<\/td>\n | 6.4.3 Repetitive peak reverse power (PRRM) or non-repetitive peak reverse power (PRSM) of avalanche rectifier diodes <\/td>\n<\/tr>\n | ||||||
45<\/td>\n | 6.4.4 Peak case non-rupture current (IRSCM) <\/td>\n<\/tr>\n | ||||||
47<\/td>\n | 7 Requirements for type tests, routine tests, endurance tests and marking 7.1 Type tests 7.2 Routine tests <\/td>\n<\/tr>\n | ||||||
48<\/td>\n | 7.3 Measuring and test methods 7.4 Marking of rectifier diodes 7.5 Endurance test 7.5.1 General 7.5.2 List of endurance tests 7.5.3 Conditions for endurance tests 7.5.4 Acceptance-defining characteristics and acceptance criteria for endurance tests <\/td>\n<\/tr>\n | ||||||
49<\/td>\n | 7.5.5 Acceptance-defining characteristics and acceptance criteria for reliability tests <\/td>\n<\/tr>\n | ||||||
50<\/td>\n | Bibliography <\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":" BS EN IEC 60747-2. Semiconductor devices – Part 2. Discrete devices. Rectifier diodes<\/b><\/p>\n |