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BS EN 61709:2017 – TC:2020 Edition

BS EN 61709:2017 – TC:2020 Edition

$280.87

Tracked Changes. Electric components. Reliability. Reference conditions for failure rates and stress models for conversion

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IEC 61709:2017 is also available as /2 which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition. IEC 61709:2017 gives guidance on the use of failure rate data for reliability prediction of electric components used in equipment. The method presented in this document uses the concept of reference conditions which are the typical values of stresses that are observed by components in the majority of applications. Reference conditions are useful since they provide a known standard basis from which failure rates can be modified to account for differences in environment from the environments taken as reference conditions. Each user can use the reference conditions defined in this document or use their own. When failure rates stated at reference conditions are used it allows realistic reliability predictions to be made in the early design phase. The stress models described herein are generic and can be used as a basis for conversion of failure rate data given at these reference conditions to actual operating conditions when needed and this simplifies the prediction approach. Conversion of failure rate data is only possible within the specified functional limits of the components. This document also gives guidance on how a database of component failure data can be constructed to provide failure rates that can be used with the included stress models. Reference conditions for failure rate data are specified, so that data from different sources can be compared on a uniform basis. If failure rate data are given in accordance with this document then additional information on the specified conditions can be dispensed with. This document does not provide base failure rates for components – rather it provides models that allow failure rates obtained by other means to be converted from one operating condition to another operating condition. The prediction methodology described in this document assumes that the parts are being used within its useful life. The methods in this document have a general application but are specifically applied to a selection of component types as defined in Clauses 6 to 20 and I.2. This third edition cancels and replaces the second edition, published in 2011. This edition constitutes a technical revision. This third edition is a merger of IEC 61709:2011 and IEC TR 62380:2004. This edition includes the following significant technical changes with respect to the previous edition: addition of 4.5 Components choice, 4.6 Reliability growth during the deployment phase of new equipment, 4.7 How to use this document, and of Clause 19 Printed circuit boards (PCB) and Clause 20 Hybrid circuits with respect to IEC TR 62380; addition of failure modes of components in Annex A; modification of Annex B, Thermal model for semiconductors, adopted and revised from IEC TR 62380; modification of Annex D, Considerations on mission profile; modification of Annex E, Useful life models, adopted and revised from IEC TR 62380; revision of Annex F (former B.2.6.4), Physics of failure; addition of Annex G (former Annex C), Considerations for the design of a data base on failure rates, complemented with parts of IEC 60319; addition of Annex H, Potential sources of failure rate data and methods of selection; addition of Annex J, Presentation of component reliability data, based on IEC 60319. Keywords: failure rate data, reliability prediction of electric components

PDF Catalog

PDF Pages PDF Title
141 National foreword
146 English
CONTENTS
153 FOREWORD
155 INTRODUCTION
156 1 Scope
2 Normative references
3 Terms, definitions and symbols
3.1 Terms and definitions
160 3.2 Symbols
161 4 Context and conditions
4.1 Failure modes and mechanisms
162 4.2 Thermal modelling
4.3 Mission profile consideration
4.3.1 General
4.3.2 Operating and non-operating conditions
163 4.3.3 Dormancy
4.3.4 Storage
4.4 Environmental conditions
164 Tables
Table 1 – Basic environments
165 4.5 Components choice
Table 2 – Values of environmental parameters for basic environments
166 4.6 Reliability growth during the deployment phase of new equipment
167 4.7 How to use this document
168 5 Generic reference conditions and stress models
5.1 Recommended generic reference conditions
Figures
Figure 1 – Comparison of the temperature dependence of for CMOS IC
169 5.2 Generic stress models
5.2.1 General
Table 3 – Recommended reference conditions for environmentaland mechanical stresses
170 5.2.2 Stress factor for voltage dependence,
5.2.3 Stress factor for current dependence,
5.2.4 Stress factor for temperature dependence,
172 5.2.5 Environmental application factor,
5.2.6 Dependence on switching rate,
Table 4 – Environmental application factor,
173 5.2.7 Dependence on electrical stress,
5.2.8 Other factors of influence
6 Integrated semiconductor circuits
6.1 Specific reference conditions
174 Table 5 – Memory
Table 6 – Microprocessors and peripherals, microcontrollers and signal processors
Table 7 – Digital logic families and bus interfaces, bus driver and receiver circuits
175 6.2 Specific stress models
6.2.1 General
Table 8 – Analog ICs
Table 9 – Application-specific ICs (ASICs)
176 6.2.2 Voltage dependence, factor
6.2.3 Temperature dependence, factor
Table 10 – Constants for voltage dependence
Table 11 – Factor for digital CMOS-family ICs
Table 12 – Factor for bipolar analog ICs
Table 13 – Constants for temperature dependence
178 Table 14 – Factor for ICs (without EPROM; FLASH-EPROM; OTPROM; EEPROM; EAROM)
Table 15 – Factor for EPROM; FLASH-EPROM; OTPROM; EEPROM; EAROM
179 7 Discrete semiconductors
7.1 Specific reference conditions
Table 16 – Transistors common, low frequency
Table 17 – Transistors, microwave, (e.g. RF > 800 MHz)
180 7.2 Specific stress models
7.2.1 General
Table 18 – Diodes
Table 19 – Power semiconductors
181 7.2.2 Voltage dependence for transistors, factor
7.2.3 Temperature dependence, factor
Table 20 – Constants for voltage dependence of transistors
Table 21 – Factor for transistors
Table 22 – Constants for temperature dependence of discrete semiconductors
182 Table 23 – Factor for transistors, reference and microwave diodes
Table 24 – Factor for diodes (without reference and microwave diodes) and power semiconductors
183 8 Optoelectronic components
8.1 Specific reference conditions
Table 25 – Optoelectronic semiconductor signal receivers
Table 26 – LEDs, IREDs, laser diodes and transmitter components
184 Table 27 – Optocouplers and light barriers
Table 28 – Passive optical components
Table 29 – Transceiver, transponder and optical sub-equipment
185 8.2 Specific stress models
8.2.1 General
8.2.2 Voltage dependence, factor
8.2.3 Current dependence, factor
Table 30 – Constants for voltage dependence of phototransistors
Table 31 – Factor for phototransistors
186 8.2.4 Temperature dependence, factor
Table 32 – Constants for current dependence of LEDs and IREDs
Table 33 – Factor for LEDs and IREDs
Table 34 – Constants for temperature dependence of optoelectronic components
187 Table 35 – Factor for optical components
188 9 Capacitors
9.1 Specific reference conditions
9.2 Specific stress model
9.2.1 General
9.2.2 Voltage dependence, factor
Table 36 – Capacitors
189 Table 37 – Constants for voltage dependence of capacitors
Table 38 – Factor for capacitors
190 9.2.3 Temperature dependence, factor
Table 39 – Constants for temperature dependence of capacitors
191 10 Resistors and resistor networks
10.1 Specific reference conditions
Table 40 – Factor for capacitors
192 10.2 Specific stress models
10.2.1 General
10.2.2 Temperature dependence, factor
Table 41 – Resistors and resistor networks
Table 42 – Constants for temperature dependence of resistors
193 11 Inductors, transformers and coils
11.1 Reference conditions
11.2 Specific stress model
11.2.1 General
11.2.2 Temperature dependence, factor
Table 43 – Factor for resistors
Table 44 – Inductors, transformers and coils
Table 45 – Constants for temperature dependence of inductors, transformers and coils
194 12 Microwave devices
12.1 Specific reference conditions
Table 46 – Factor for inductors, transformers and coils
Table 47 – Microwave devices
195 12.2 Specific stress models
13 Other passive components
13.1 Specific reference conditions
13.2 Specific stress models
14 Electrical connections
14.1 Specific reference conditions
Table 48 – Other passive components
196 14.2 Specific stress models
15 Connectors and sockets
15.1 Reference conditions
15.2 Specific stress models
16 Relays
16.1 Reference conditions
Table 49 – Electrical connections
Table 50 – Connectors and sockets
197 16.2 Specific stress models
16.2.1 General
16.2.2 Dependence on switching rate, factor
Table 51 – Relays
198 16.2.3 Dependence on electrical stress, factor
Figure 2 – Selection of stress regions in accordance with current and voltage-operating conditions
Table 52 – Factor for low current relays
Table 53 – Factor for general purpose relays
199 16.2.4 Temperature dependence, factor
17 Switches and push-buttons
17.1 Specific reference conditions
Table 54 – Factor for automotive relays
Table 55 – Constants for temperature dependence of relays
Table 56 – Factor for relays
200 17.2 Specific stress model
17.2.1 General
17.2.2 Dependence on electrical stress, factor
Figure 3 – Selection of stress regionsin accordance with current and voltage-operating conditions
Table 57 – Switches and push-buttons
201 18 Signal and pilot lamps
18.1 Specific reference conditions
18.2 Specific stress model
18.2.1 General
Table 58 – Factor for switches and push-buttons for low electrical stress
Table 59 – Factor for switches and push-buttons for higher electrical stress
Table 60 – Signal and pilot lamps
202 18.2.2 Voltage dependence, factor
19 Printed circuit boards (PCB)
20 Hybrid circuits
Table 61 – Factor for signal and pilot lamps
203 Annexes
Annex A (normative) Failure modes of components
Table A.1 – Failure modes: ICs (digital)
204 Table A.2 – Failure modes: transistors, diodes, optocouplers
Table A.3 – Failure modes: LEDs
Table A.4 – Failure modes: laser diodes and modules
Table A.5 – Failure modes: photodiodes and receiver modules
205 Table A.6 – Failure modes: capacitors
Table A.7 – Failure modes: resistors, inductive devices, relays
206 Annex B (informative) Thermal model for semiconductors
B.1 Thermal model
207 B.2 Junction temperature calculation
Figure B.1 – Temperatures inside equipment
208 B.3 Thermal resistance evaluation
Figure B.2 – Thermal resistance model
209 B.4 Power dissipation of an integrated circuit P
Table B.1 – Thermal resistance as a function of package type, pin number and airflow factor
Table B.2 – Typical values of are
210 Table B.3 – Values of and
212 Annex C (informative) Failure rate prediction
C.1 General
C.2 Failure rate prediction for assemblies
C.2.1 General
213 C.2.2 Assumptions and limitations
C.2.3 Process for failure rate prediction
214 C.2.4 Prediction models
215 C.2.5 Other methods of reliability prediction
216 C.2.6 Validity considerations of reliability models and predictions
217 C.3 Component considerations
C.3.1 Component model
C.3.2 Components classification
C.4 General consideration about failure rate
C.4.1 General
218 C.4.2 General behaviour of the failure rate of components
219 C.4.3 Expected values of failure rate
C.4.4 Sources of variation in failure rates
221 Annex D (informative) Considerations on mission profile
D.1 General
D.2 Dormancy
222 D.3 Mission profile
223 D.4 Example of mission profile
Figure D.1 – Mission profile
224 Annex E (informative) Useful life models
E.1 General
E.2 Power transistors
E.3 Optocouplers
E.3.1 Useful life L
225 E.3.2 Factor L0
E.3.3 Factor (0
227 E.4 LED and LED modules
E.4.1 Useful life L
E.4.2 Factor L0
228 E.4.3 Factor (0
229 E.5 Aluminium, non-solid electrolyte capacitors
230 E.6 Relays
E.7 Switches and keyboards
E.8 Connectors
Table E.1 – Useful life limitations for switches and keyboards
231 Annex F (informative) Physics of failure
F.1 General
232 F.2 Failure mechanisms of integrated circuits
Table F.1 – Failure mechanism for Integrated circuits
233 Annex G (informative) Considerations for the design of a data base on failure rates
G.1 General
G.2 Data collection acquisition – collection process
G.3 Which data to collect and how to collect it
234 G.4 Calculation and decision making
G.5 Data descriptions
G.6 Identification of components
G.6.1 General
235 G.6.2 Component identification
G.6.3 Component technology
G.7 Specification of components
G.7.1 General
G.7.2 Electrical specification of components
236 G.7.3 Environmental specification of components
G.8 Field related issues data
G.8.1 General
G.8.2 Actual field conditions
G.8.3 Data on field failures
237 G.9 Test related issues data
G.9.1 General
G.9.2 Actual test conditions
G.9.3 Data on test failures
238 G.10 Failure rate database attributes
239 Table G.1 – Reliability prediction database attributes
240 Annex H (informative) Potential sources of failure rate data and methods of selection
H.1 General
H.2 Data source selection
241 H.3 User data
H.4 Manufacturer’s data
242 H.5 Handbook reliability data
H.5.1 General
H.5.2 Using handbook data with this document
243 H.5.3 List of available handbooks
Table H.1 – Result of calculation for transistors common, low frequency
Table H.2 – Sources of reliability data (in alphabetical order)
246 Annex I (informative) Overview of component classification
I.1 General
I.2 The IEC 61360 system
247 Table I.1 – Classification tree (IEC 61360-4)
254 I.3 Other systems
I.3.1 General
I.3.2 NATO stock numbers
I.3.3 UNSPSC codes
I.3.4 STEP/EXPRESS
I.3.5 IECQ
255 I.3.6 ECALS
I.3.7 ISO 13584
I.3.8 MIL specifications
256 Annex J (informative) Presentation of component reliability data
J.1 General
J.2 Identification of components
J.2.1 General
257 J.2.2 Component identification
J.2.3 Component technology
J.3 Specification of components
J.3.1 General
J.3.2 Electrical specification of components
J.3.3 Environmental specification of components
J.4 Test related issues data
J.4.1 General
258 J.4.2 Actual test conditions
J.5 Data on test failures
260 Annex K (informative) Examples
K.1 Integrated circuit
K.2 Transistor
K.3 Capacitor
261 K.4 Relay
262 Bibliography

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BS EN 61709:2017 - TC
$280.87