{"id":234272,"date":"2024-10-19T15:16:44","date_gmt":"2024-10-19T15:16:44","guid":{"rendered":"https:\/\/pdfstandards.shop\/product\/uncategorized\/bs-en-iec-60749-172019-tc\/"},"modified":"2024-10-25T09:49:12","modified_gmt":"2024-10-25T09:49:12","slug":"bs-en-iec-60749-172019-tc","status":"publish","type":"product","link":"https:\/\/pdfstandards.shop\/product\/publishers\/bsi\/bs-en-iec-60749-172019-tc\/","title":{"rendered":"BS EN IEC 60749-17:2019 – TC"},"content":{"rendered":"
IEC 60749-17:2019 is performed to determine the susceptibility of semiconductor devices to non-ionizing energy loss (NIEL) degradation. The test described herein is applicable to integrated circuits and discrete semiconductor devices and is intended for military- and aerospace-related applications. It is a destructive test. This edition includes the following significant technical changes with respect to the previous edition: <\/p>\n
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16<\/td>\n | undefined <\/td>\n<\/tr>\n | ||||||
19<\/td>\n | English CONTENTS <\/td>\n<\/tr>\n | ||||||
20<\/td>\n | FOREWORD <\/td>\n<\/tr>\n | ||||||
22<\/td>\n | 1 Scope 2 Normative references 3 Terms and definitions 4 Test apparatus 4.1 Test instruments 4.2 Radiation source <\/td>\n<\/tr>\n | ||||||
23<\/td>\n | 4.3 Dosimetry equipment 4.4 Dosimetry measurements 4.4.1 Neutron fluences 4.4.2 Dose measurements 5 Procedure 5.1 Safety requirements 5.2 Test samples <\/td>\n<\/tr>\n | ||||||
24<\/td>\n | 5.3 Pre-exposure 5.3.1 Electrical tests 5.3.2 Exposure set-up 5.4 Exposure 5.5 Post-exposure 5.5.1 Electrical tests 5.5.2 Anomaly investigation 5.6 Reporting <\/td>\n<\/tr>\n | ||||||
25<\/td>\n | 6 Summary <\/td>\n<\/tr>\n | ||||||
26<\/td>\n | Bibliography <\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":" Tracked Changes. Semiconductor devices. Mechanical and climatic test methods – Neutron irradiation<\/b><\/p>\n |